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Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode
IXTH 1N100
IXTT 1N100
V DSS
I D25
R DS(on)
= 1000 V
= 1.5 A
= 11 ?
Avalanche Energy Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1000
1000
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 20
± 30
1.5
6
1.5
6
V
V
A
A
A
mJ
TO-268 Case Style
D (TAB)
E AS
dv/dt
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 18 ?
200
3
mJ
V/ns
G
S
(TAB)
P D
T C = 25 ° C
60
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
M d
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
Features
Weight TO-268
TO-247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
4
6
300
g
g
° C
? International standard packages
? High voltage, Low R DS (on) HDMOS TM
process
? Rugged polysilicon gate cell structure
? Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? Switch-mode
and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 25 μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
1000
2.5
4.5
± 100
25
500
V
V
nA
μ A
μ A
power supplies
? Flyback inverters
? DC choppers
? High frequency matching
Advantages
R DS(on)
V GS = 10 V, I D = 1.0A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
11
?
? Space savings
? High power density
? 2002 IXYS All rights reserved
98886 (1/2)
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